Manufacturer | Toshiba Semiconductor and Storage |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate, 1.8V Drive |
Power - Max | 1W (Ta) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Operating Temperature | 150°C |
Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 10V |
Supplier Device Package | 6-µDFN (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 6.74nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |