Manufacturer | Diodes Incorporated |
FET Type | P-Channel |
Vgs (Max) | -6V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 9-UFBGA, WLBGA |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 18mOhm @ 2A, 4.5V |
Power Dissipation (Max) | 1W (Ta) |
Supplier Device Package | U-WLB1515-9 |
Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 12 V |
Input Capacitance (Ciss) (Max) @ Vds | 457 pF @ 6 V |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta) |
Leading businesses in the automotive, industrial, computing, consumer electronics, and communications industries receive high-quality semiconductor products from Diodes Incorporated. To satisfy client's needs, they make use of their enlarged product line of discrete, analog, and mixed-signal components as well as cutting-edge packaging technologies. We can be a leading supplier for high-volume, high-growth markets thanks to their comprehensive range of application-specific solutions and solutions-focused sales, as well as their global operations of 25 sites, which include engineering, testing, production, and customer service.