Manufacturer | Toshiba Semiconductor and Storage |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Mounting Type | Surface Mount |
Package / Case | 0402 (1006 Metric) |
Product Status | Active |
Capacitance @ Vr, F | 130pF @ 0V, 1MHz |
Supplier Device Package | CL2E |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 25 µA @ 40 V |
Voltage - DC Reverse (Vr) (Max) | 40 V |
Current - Average Rectified (Io) | 1A |
Operating Temperature - Junction | 150°C |
Voltage - Forward (Vf) (Max) @ If | 570 mV @ 1 A |