BUK9E8R5-40E,127 Specifications
Manufacturer | Rochester Electronics |
FET Type | N-Channel |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
Power Dissipation (Max) | 96W (Tc) |
Supplier Device Package | I2PAK |
Gate Charge (Qg) (Max) @ Vgs | 20.9 nC @ 5 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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