BUK655R0-75C,127 Specifications
Manufacturer | Rochester Electronics |
FET Type | N-Channel |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 25A, 10V |
Power Dissipation (Max) | 263W (Tc) |
Supplier Device Package | TO-220AB |
Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 10 V |
Drain to Source Voltage (Vdss) | 75 V |
Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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